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| miniPROFET(R) BSP 452 * High-side switch * Short-circuit protection * Input protection * Overtemperature protection with hysteresis * Overload protection * Overvoltage protection * Switching inductive load * Clamp of negative output voltage with inductive loads * Undervoltage shutdown * Maximum current internally limited * Electrostatic discharge (ESD) protection 1 * Reverse battery protection ) Package: SOT 223 Type Ordering code Q67000-S271 SOT-223 1 SOT-223 BSP 452 Application * C compatible power switch for 12 V DC grounded loads * All types of resistive, inductive and capacitive loads * Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input,monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Blockdiagramm: + Vbb 4 Voltage source ESDDiode Overvoltage protection Current limit Gate protection V Logic Voltage sensor Charge pump Level shifter Limit for unclamped ind. loads OUT Rectifier Temperature sensor 1 3 R IN in Load ESD Logic GND miniPROFET Load GND 2 Signal GND 1) With resistor RGND=150 in GND connection, resistor in series with IN connections reverse load current limited by connected load. Data Book 1 20.08.96 miniPROFET(R) BSP 452 Pin 1 2 3 4 Symbol OUT GND IN Vbb O I + Function Output to the load Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage Load current self-limited 2) Maximum input voltage Maximum input current Inductive load switch-off energy dissipation, single pulse IL = 0.5A , TA = 150C (not tested, specified by design) 3 Load dump protection ) VLoadDump=UA+Vs RL= 24 RI=2 , td=400ms, IN= low or high, UA=13,5V RL= 80 (not tested, specified by design) Electrostatic discharge capability (ESD)5) PIN 3 PIN 1,2,4 Operating temperature range Storage temperature range 6 Max. power dissipation (DC) ) Thermal resistance Symbol Vbb IL VIN IIN EAS Values 40 Unit V A V mA J IL(SC) -5.0...Vbb 5 0.5 VLoad dump4) 60 80 1 2 -40 ...+150 -55 ...+150 1.8 7 70 V VESD Tj Tstg Ptot RthJS RthJA kV C W K/W TA = 25 C chip - soldering point: chip - ambient:6) 2) 3) At VIN > Vbb, the input current is not allowed to exceed 5 mA. Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a 150 resistor in the GND connection A resistor for the protection of the input is integrated. 4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 5) HBM according to MIL-STD 883D, Methode 3015.7 6) BSP 452 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection Data Book 2 20.08.96 miniPROFET(R) BSP 452 Electrical Characteristics Parameter and Conditions at Tj = 25 C, Vbb = 13.5V unless otherwise specified Symbol min Values typ Unit max Load Switching Capabilities and Characteristics On-state resistance (pin 4 to 1) IL = 0.5 A, Vin = high Tj = 25C Tj = 150C 7) Nominal load current (pin 4 to 1) ISO Standard: VON = Vbb - VOUT = 0.5 V TS = 85 C Turn-on time to 90% VOUT Turn-off time to 10% VOUT RL = 24 Slew rate on 10 to 30% VOUT, RL = 24 Slew rate off 70 to 40% VOUT, RL = 24 RON IL(ISO) --0.7 0.16 --- 0.2 0.4 -- A ton toff dV /dton -dV/dtoff ----- 60 60 2 2 100 150 4 4 s V/s V/s Input Allowable input voltage range, (pin 3 to 2) Input turn-on threshold voltage Tj = -40...+150C Input turn-off threshold voltage Tj = -40...+150C Input threshold hysteresis Off state input current (pin 3) VIN(off) = 1.2 V Tj = -40...+150C On state input current (pin 3) VIN(on) = 3.0 V to Vbb Tj = -40...+150C Input resistance VIN VIN(T+) VIN(T-) -3.0 -1.5 -10 10 1.5 ---0.5 --2.8 Vbb 3.5 --60 100 3.5 V V V V A A k VIN(T) IIN(off) IIN(on) RIN 7) IL(ISO) is limited by current limitation, see IL(SC), next page Data Book 3 20.08.96 miniPROFET(R) BSP 452 Parameter and Conditions at Tj = 25 C, Vbb = 13.5V unless otherwise specified Symbol min Values typ Unit max Operating Parameters Operating voltage8) Undervoltage shutdown Undervoltage restart Tj =-40...+150C Tj =-40...+150C Tj =-40...+25C Tj =+150C Undervoltage restart of charge pumpe 7 see diagram page 7 Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150C Overvoltage restart Tj =-40...+150C Overvoltage hysteresis Tj =-40...+150C Standby current (pin 4), Vin = low Tj =-40...+150C Operating current (pin 2), Vin = 5 V leakage current (pin 1) Vin = low Tj =-40...+25C Tj =150C Protection Functions Current limit (pin 4 to 1) Tj = 25C Vbb = 20V Tj = -40...+150C Overvoltage protection Ibb=4mA Tj =-40...+150C Output clamp (ind. load switch off) at VOUT=Vbb-VON(CL), Ibb = 4mA Thermal overload trip temperature Thermal hysteresis Inductive load switch-off energy dissipation9) Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) Vbb(under) 5.0 3.5 ---34 33 ----- ---5.6 0.3 --0.7 10 1 2 34 5 6.5 7.0 7 -42 --25 1.6 5 7 V V V V V V V V A mA A Vbb(over) Vbb(o rst) Vbb(over) Ibb(off) IGND IL(off) IL(SC) Vbb(AZ) VON(CL) Tjt Tjt EAS 0.7 0.7 41 41 150 --- 1.5 --47 -10 -- 2 2.4 ----0.5 A V V C K J Tj Start = 150 C, single pulse, IL = 0.5 A, Vbb = 12 V (not tested, specified by design) 10 Reverse battery (pin 4 to 2) ) (not tested, specified by design) -Vbb -- -- 30 V 8) 9) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V While demagnetizing load inductance, dissipated energy in PROFET is EAS= VON(CL) * iL(t) dt, approx. 2 V EAS= 1/2 * L * IL * (V ON(CL) ) ON(CL) - Vbb 10) Requires 150 resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Data Book 4 20.08.96 miniPROFET(R) BSP 452 Max. allowable power dissipation Ptot = f (TA,TSP) Ptot [W] 18 16 14 12 TSP 10 Current limit characteristic IL(SC) = f (Von); (Von see testcircuit) IL(SC) [A] 2 1.8 1.6 1.4 1.2 1 150C 25C -40C 8 0.8 6 0.6 4 TA 2 0 0 25 50 75 100 125 150 0.4 0.2 0 0 2 4 6 8 10 12 14 TA, TSP[C] Von [V] On state resistance (Vbb-pin to OUT-pin) RON = f (Tj); Vbb = 13.5 V; IL = 0.5 A RON [] 0.4 0.35 0.3 Typ. input current IIN = f (VIN); Vbb = 13,5 V IIN [A] 50 -40C 45 40 35 + 25C 0.25 0.2 0.15 0.1 98% 30 25 20 15 10 +150C 0.05 0 -50 -25 0 25 50 75 100 125 150 5 0 0 2 4 6 8 10 12 14 Tj [C] VIN [V] Data Book 5 20.08.96 miniPROFET(R) BSP 452 Typ. operating current IGND = f (Tj); Vbb = 13,5 V; VIN = high IGND [mA] 0.8 0.7 0.6 Typ. overload current IL(lim) = f (t); Vbb = 13,5 V, no heatsink, Param.: Tjstart IL(lim) [A] 1.4 1.2 1 0.5 0.8 0.4 0.6 +150C +25C -40C 0.3 0.2 0.1 0 -50 -25 0 25 50 75 100 125 150 0.4 0.2 0 -50 0 50 100 150 200 250 300 350 400 Tj [C] t [ms] Typ. standby current Ibb(off) = f (Tj); Vbb = 13,5 V; VIN = low Ibb(off) [A] 8 7 6 Short circuit current IL(SC) = f (Tj); Vbb = 13,5 V IL(SC) [A] 1.4 1.2 1 5 0.8 4 0.6 3 2 1 0 -50 -25 0 25 50 75 100 125 150 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 Tj [C] Tj [C] Data Book 6 20.08.96 miniPROFET(R) BSP 452 Typ. input turn on voltage threshold VIN(T+) = f (Tj); VIN(T+) [V] 3 13V 2.5 Figure 6: Undervoltage restart of charge pumpe VON [V] 2 1.5 V bb(over) V 1 bb(o rs t) V bb(u rs t) 0.5 V V bb(under) bb(u c p) 0 -50 -25 0 25 50 75 100 125 150 Tj [C] Vbb [V] charge pump starts at Vbb(ucp) about 7 V typ. Typ. on-state resistance (Vbb-Pin to Out-Pin) RON = f (Vbb,IL); IL=0.5A, Tj = 25C RON [m] 300 Test circuit 250 200 150 100 50 0 0 5 10 15 20 25 Vbb [V] Data Book 7 20.08.96 mini PROFET(R) BSP 452 Package: all dimensions in mm. SOT 223/4: Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Semiconductor Group 8 20.08.96 |
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